A. R. Barnes

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InSb-based quantum well field-effect transistors, with gate length down to 0.2 /spl mu/m, are fabricated for the first time. Hall measurements show that room temperature electron mobilities over 30,000 cm /sup 2/V/sup -1/s/sup -1/ are achieved with a sheet carrier density over 1/spl times/10/sup 12/ cm/sup -2/ in a modulation doped InSb quantum well with(More)
A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technologies, an Infineon SiGe HBT (BFP620) and Transcom GaAs pHEMT(More)
In this paper, a 2 to 18 GHz wideband receiver MMIC for EW applications is presented. The receiver comprises a balanced cascode travelling wave LNA, a wideband active balun and a cold-FET ring mixer. The MMIC was fabricated using the TriQuint GaAs pHEMT process, using 0.25 /spl mu/m gate length devices. The measured conversion gain is greater than 7.8 dB(More)
Three W-band resistive mixer architectures have been designed and their performance compared and contrasted. The mixers were fabricated using 0.1 /spl mu/m gate length InP HEMT technology for improved conversion loss performance compared to GaAs pHEMT. In particular, a state of art 94 GHz sub-harmonic resistive mixer is reported with 9.5 dB conversion loss(More)
A three stage, 6-18 GHz, dual channel MMIC power amplifier has been designed and tested. The design has been fabricated using a 0.25 /spl mu/m T-gate, MBE grown GaAs-InGaAs-AlGaAs, power PHEMT process at Texas Instruments. The measured single channel small signal gain is 24.1/spl plusmn/3.4 dB over 6-18 GHz with an input return loss of >12 dB. The single(More)
A state of art 6 to 18 GHz power amplifier module, combining two custom designed MMIC power amplifiers, has been fabricated and tested. Measured results show that the module is capable of delivering an output power of 10 W with /spl ges/15 dB gain. A second iteration power amplifier MMIC design is also described with improved output power capability. By(More)
Cloud observations are of significant importance in the study of long-term climatic trends. These observations require high-resolution radars at 94GHz. We have developed a compact multichip module (MCM) 94GHz radar receiver and the state of the art InP MMICs to construct it. The LNA MMIC determined the noise figure of the receiver, 3dB, and conversion gain(More)
A multifunction MMIC, containing the core components required for an EHF satellite communications receiver, operating over 43.5 to 45.5 GHz, has been designed and tested. The circuit has been fabricated using a high yield, commercially available, 0.25 /spl mu/m PHEMT GaAs-InGaAs-AlGaAs foundry process at GEC Marconi Materials Technology Ltd. The(More)
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