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In this paper, we present design, fabrication and coupled multifield analysis of hollow out-of-plane silicon microneedles with piezoelectrically actuated microfluidic device for transdermal drug delivery (TDD) system for treatment of cardiovascular or hemodynamic disorders such as hypertension. The mask layout design and fabrication process of silicon(More)
Three different types of surface, silicon dioxide (SiO2), silicon nitride (Si3N4), and titanium oxynitride (TiON) were modified for lactate dehydrogenase (LDH) immobilization using (3-aminopropyl)triethoxysilane (APTES) to obtain an amino layer on each surface. The APTES modified surfaces can directly react with LDH via physical attachment. LDH can be(More)
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1(More)
This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f. magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited(More)
Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4(More)
This paper presents the characteristics of silicon thin film thermistors. The polycrystalline silicon and amorphous silicon films were deposited by low pressure chemical vapor deposition (LPCVD) to serve as thermistors. We have studied the effects of temperature on thermistor with various boron implantation doses from 1.0times10<sup>16</sup> to(More)
Power diodes development concentrate on fast switching, high reverse voltage blocking and low power consumption. One way to improve switching property is reducing minority carrier lifetime by electron irradiation. This paper presented degradation of silicon PN junction which cause from lifetime modification by electron irradiation. Silicon PIN power diodes(More)
This paper presents a new model for predicting the effect of temperature and the devices dimension on the threshold voltage of PMOS. Temperature-dependent models have been developed including the temperature affect of surface potentials, intrinsic carrier concentration and energy band gap. The developed models have been used to study the temperature(More)
This paper presents the new model of 5-contacts vertical Hall device. Despite of the induced force from Hall electric field act upon the current along the contacts for induced Hall voltage, there are some deviation currents from the middle contact that contribute the Hall voltage. The deviation current pass through the bulk resistance causes the voltage(More)