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The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,…), data retention is assured up to 85°C, still limited for the automotive market segment. Alternative active material able(More)
In this paper, we investigate the impact of Ge-enrichment coupled to N- or C-doping in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> based materials on low-resistance state (LRS or SET) performance combined with high-resistance state (HRS or RESET) high-temperature data retention (HTDR) in Phase-Change Memories (PCM). These innovative materials have been(More)
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based on a GeTe active material. GeTe PCMs show, first, extremely rapid SET operation (yielding a gain of more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up to 1 × 10<sup>5</sup>, with 30-ns SET and RESET stress(More)
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then(More)
In this work, the impact of Ti electrodes on the electrical behaviour of HfO<inf>2</inf>-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated (see Fig. 1). We first provide several experiments to clearly demonstrate that switching is driven by creation-disruption of a conductive filament.(More)
This paper investigates material and electrical properties of a new chalcogenide alloy for Phase-Change Memories (PCM): Carbon-doped GeTe (named GeTeC). First, several physico-chemical, optical and electrical analyses have been performed on full-sheet chalcogenide depositions in order to understand the intrinsic GeTeC phase-change behavior, and to(More)
Research on phase change chalcogenide materials and Phase Change Memory (PCM) devices, is increasing and the recent proposals of alternative applications of PCM such as emulating the biological synapse in future bio-inspired computing systems has led to the need of fast, versatile and accurate solutions for advanced electrical characterization. In this(More)
The Phase Change Memory (PCM), is one of the most promising concepts, as a replacement of Flash memories that should be put in production in next years. However, even if the robustness of such technology is demonstrated for consumer stand-alone applications [1] with typically GST as phase-change chalcogenide material, data retention at high temperature(More)
This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO<sub>2</sub> active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the(More)