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We report on 10 gigabit Ethernet (IEEE 802.3ae) fiber-optic transmission at 1.3 mum wavelengh utilizing high-speed GaNAsSb uni-travelling-carrier photodetectors (PDs) grown on GaAs substrate. With an optical bandgap of ~0.88 eV, the PDs are suitable for near-infrared operation up to wavelengths of about 1380 nm. The dc responsivity and 3-dB cut-off(More)
We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-mum GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. The 0.1-mum -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities(More)
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