Learn More
—. The third generation of NXP 0.25 µm SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has f T /f max of 216/177 GHz and BV cb0 of 5.2 V. The high-voltage NPN has 12 V BV cb0 , and f T /f max of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record(More)
DISCLAIMER This report was prepared as the result of work sponsored by the California Energy Commission. It does not necessarily represent the views of the Energy Commission, its employees or the State of California. The Energy Commission, the State of California, its employees, contractors and subcontractors make no warranty, express or implied, and assume(More)
Heart rate variability (HRV) is a physiological parameter which has increased its importance in recent years due to its relationship with the autonomic nervous system (ANS) and cardiovascular disorders. In this work the pulse rate variability (PRV) is measured as a surrogate measurement of HRV using only a video of the face of the subject. Because of pulse(More)
J. Discrete portable measuring device for monitoring noninvasive intraocular pressure with a nano-structured sensing contact lens prototype. Veciana J. Non-invasive intraocular pressure monitoring with a contact lens engineered with a nanostructured polymeric sensing film.
Porous silicon (PS) on n-type and p-type crystalline silicon (c-Si) devices were obtained by electrochemical HF etching of Si wafers. In order to obtain electronic devices based on porous silicon on crystalline silicon structure, the first step is to obtain good electrical contacts on the porous layer. For this reason, several metal/PS/metal and(More)
  • 1