A. Martin-Minguez

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A self-consistent laser simulator has been set up for the simulation of edge-emitting GaInP/AlGaInP red lasers. The modeling results have been compared with experiments in broad area 635 nm GaInP/AlGaInP laser diodes. The leakage of electrons and its dependence on the temperature and the p-doping level are analyzed.
High brightness gain guided tapered lasers emitting at 1060 nm were designed, simulated and fabricated. The devices showed excellent beam quality up to 2 W cw, and the experimental results were similar to the predictions of the simulations. Tapered lasers with separate contacts were designed with the goal of achieving a high modulated power with a low(More)
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