This paper reviews and extends the theory of electron and hole motion and density in solids with position-dependent band structure. This includes materials with graded composition, like… (More)

The conventional carrier transport equations used in device analysis must be modified for heavily doped semiconductor regions. The modifications to Shoekley's auxiliary equations relating the carrier… (More)

The relationship between the intrinsic Fermi level E<inf>i</inf>and the electrostatic potential φ is reviewed in detail. It is shown that, contrary to popular belief, E<inf>i</inf>has no… (More)

When the band gap, electron affinity or density of states in a material vary gradually with position, the carrier densities and carrier transport equations contain terms in addition to those found in… (More)

The correct form of the diffusion component of current in semiconductors is derived using a perturbation solution of the Boltzmann transport equation. The mobile particles are assumed to obey quantum… (More)

An accurate approximation for calculating two-step diffusion profiles is given. The result valid for the field-free case has the same form as the Gaussian profile resulting from the conventional… (More)