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This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz ) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF m high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details(More)
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