A.M. Wowchak

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Three periods of Al<sub>0.1</sub>Ga<sub>0.9</sub>N/Al<sub>0.15</sub>Ga<sub>0.85</sub> N multiple quantum wells (MQWs) were used as the active region of a p-i-n diode fabricated on 6H-SiC substrate. Electroluminescence (EL) of these MQWs has been investigated in both injection and avalanche modes. Band-to-band luminescence of the(More)
In this letter, a novel process for recessed-gate AlGaN/GaN high-electron-mobility transistors using an Al<sub>2</sub>O<sub>3</sub>/SiN<i>x</i> dielectric has been developed. The Al<sub>2</sub>O<sub>3</sub>/SiN<i>x</i> dielectric bilayer was used as a recess etch-mask for short-gate-footprint definition. Recessed-gate devices with a gate length of 70 nm(More)
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