A. Lisauskas

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This paper reports on field-effect-transistor-based terahertz detectors for the operation at discrete frequencies spanning from 0.2 to 4.3 THz. They are implemented using a 150-nm CMOS process technology, employ self-mixing in the n-channels of the transistors and operate well above the transistors' cutoff frequency. The theoretical description of device(More)
We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for multi-spectral imaging from 0.76 to 4.25 THz. TeraFETs were fabricated in a commercial 90-nm CMOS process and noise-equivalent powers of 59, 20, 63, 85 and 110 pW/√(Hz) at 0.216, 0.59, 2,52, 3.11 and 4.25(More)
We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than(More)
We demonstrate the principle applicability of antenna-coupled complementary metal oxide semiconductor (CMOS) field-effect transistor arrays as cameras for real-time coherent imaging at 591.4 GHz. By scanning a few detectors across the image plane, we synthesize a focal-plane array of 100×100 pixels with an active area of 20×20 mm2, which is applied to(More)
We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on high-electron-mobility transistors fabricated with a AlGaN/GaN heterostructure are presented. Physical device parameters are extracted. The measured samples exhibit good(More)
Distributed phenomena permit the use of field-effect transistors for the detection of frequencies far beyond transistor cut-off. This contribution gives details on an improved design for patch antenna-coupled field-effect-transistors and shows sensitive detection from 0.2 to 4.3 THz for monolithically integrated devices relying on commercial 0.15-μm(More)
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (Ter-aFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are integrated on-chip with bow-tie antennas. The broadband sensitivity of the fabricated detectors was characterized in the frequency range from 0.4 up to 1.18 THz. We(More)
G. Valušisa,c,∗, D. Seliuta, V. Tamošiūnas, E. Širmulis, S. Balakauskas, J. Gradauskas, A. Sužiedėlis, S. Ašmontas, T. Anbinderis, A. Narkūnas, I. Papsujeva, A. Lisauskas, H.G. Roskos and K. Köhler Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania Elmika Ltd, Naugarduko 41, 03227 Vilnius, Lithuania Physikalisches Institut der J.W.(More)
We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) and lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bowtie antennas were fabricated in a CVD-based growth process and were successfully applied for(More)
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