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This paper reports on field-effect-transistor-based terahertz detectors for the operation at discrete frequencies spanning from 0.2 to 4.3 THz. They are implemented using a 150-nm CMOS process technology, employ self-mixing in the n-channels of the transistors and operate well above the transistors' cutoff frequency. The theoretical description of device(More)
We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than(More)
We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on high-electron-mobility transistors fabricated with a AlGaN/GaN heterostructure are presented. Physical device parameters are extracted. The measured samples exhibit good(More)
We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for multi-spectral imaging from 0.76 to 4.25 THz. TeraFETs were fabricated in a commercial 90-nm CMOS process and noise-equivalent powers of 59, 20, 63, 85 and 110 pW/√(Hz) at 0.216, 0.59, 2,52, 3.11 and 4.25(More)
Distributed phenomena permit the use of field-effect transistors for the detection of frequencies far beyond transistor cut-off. This contribution gives details on an improved design for patch antenna-coupled field-effect-transistors and shows sensitive detection from 0.2 to 4.3 THz for monolithically integrated devices relying on commercial 0.15-μm(More)
We demonstrate the principle applicability of antenna-coupled complementary metal oxide semiconductor (CMOS) field-effect transistor arrays as cameras for real-time coherent imaging at 591.4 GHz. By scanning a few detectors across the image plane, we synthesize a focal-plane array of 100×100 pixels with an active area of 20×20 mm2, which is applied to(More)
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (Ter-aFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are integrated on-chip with bow-tie antennas. The broadband sensitivity of the fabricated detectors was characterized in the frequency range from 0.4 up to 1.18 THz. We(More)
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