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Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of(More)
Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been(More)
Photoluminescence in the 2–5 mm spectral region is reported from InAs12xSbx quantum dots grown from the liquid phase at 580 °C on an InAs ~100! substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x50.2– 0.3) and strain. The 4 K photoluminescence of the isolated and(More)
epitaxy J. Ibáñez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier Institut Jaume Almera, Consell Superior d’Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n, 08028 Barcelona, Catalonia, Spain Department of Physics,(More)
In this letter, we report an InAsSb p/sup +/-n junction photodetector grown on InAs substrate by liquid phase epitaxy. Electrical and optical characterizations of the device have been carried out at room temperature for operation of the device in the mid-infrared region. The study revealed that the dark current of the photodetector under reverse bias is(More)
Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements.(More)
We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 mm, suitable for carbon monoxide gas detection. The source is based on an optical whispering ~or circulating! mode which is generated near the edges of the mesa and which is responsible for the superluminescence. A pulsed optical output power in excess of 2.2 mW at room(More)