A. Khalid

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a r t i c l e i n f o We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150 °C. By use of a reflowed photoresist mask a sidewall with 60 degree positive slope was achieved, whereas a nearly vertical one was obtained when(More)
—This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide-based wafer. T-gate technology has been used for the maximisation of the transistor(More)
In this thesis, GaAs heterostructure MOSFETs are investigated as a potential technology for digital circuit design. The devices under investigation are 0.6 µm gate length, enhancement mode, heterostructure MOSFETs, with a high-κ dielectric (Ga 2 O 3), and an InGaAs channel. Historically silicon CMOS technology has been the natural choice for digital(More)
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