A. Khalid

Learn More
—This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide-based wafer. T-gate technology has been used for the maximisation of the transistor(More)
  • 1