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Metamaterial absorbers have attracted considerable attention for applications in the terahertz range. In this Letter, we report the design, fabrication, and characterization of a terahertz dual band metamaterial absorber that shows two distinct absorption peaks with high absorption. By manipulating the periodic patterned structures as well as the dielectric(More)
This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide based wafer. T-gate technology has been used for the maximisation of the transistor(More)
We present the simulation, implementation, and measurement of a polarization insensitive broadband resonant terahertz metamaterial absorber. By stacking metal-insulator layers with differing structural dimensions, three closely positioned resonant peaks are merged into one broadband absorption spectrum. Greater than 60% absorption is obtained across a(More)
We have developed low-loss polymer artificial dielectric quarter wave plates (QWP) operating at 2.6, 3.2 and 3.8 THz. The QWPs are imprinted on high density polyethylene (HDPE) using silicon masters. The grating period for the quarter wave plates is 60 microm. 330 microm, 280 microm and 230 microm deep gratings are used to obtain a pi/2 phase retardance(More)
We present the simulation, implementation, and measurement of a polarization insensitive resonant metamaterial absorber in the terahertz region. The device consists of a metal/dielectric-spacer/metal structure allowing us to maximize absorption by varying the dielectric material and thickness and, hence, the effective electrical permittivity and magnetic(More)
We have fabricated terahertz wire grid polarizer and terahertz bandpass filter devices on high-density polyethylene substrates using simple photolithographic fabrication techniques. The performance of the fabricated devices was measured using a Fourier transform IR spectrometer. Both devices showed good performance in the terahertz frequency range up to 5(More)
This paper presents monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator with high performance: high power at high frequencies. The circuit topology employs two In0.53Ga0.47As/AlAs RTDs in parallel and each device is biased individually. These oscillators operate at 125GHz, 156GHz and 166 GHz with output power 0.34 mW,(More)
When biased on the negative differential resistance regime, electroluminescence (EL) is emitted from planar GaAs heterostructure Gunn diodes due to the recombination of electrons in the device channel with holes that are generated by impact ionisation when the Gunn domains reach the anode edge. This EL forms non-uniform patterns whose intensity shows(More)