A.-K. Tiedemann

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Vertical and lateral Scanning Joule Expansion Microscopy measurements are compared for the first time. Frequency behaviors of the thermal-mechanical system are analyzed by introducing equivalent circuits for thermo-elastic transport mechanisms. Advanced failure analysis on degradation processes of interconnects can be performed by increasing temperature(More)
Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.
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