A.-K. Tiedemann

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Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.
Vertical and lateral Scanning Joule Expansion Microscopy measurements are compared for the first time. Frequency behaviors of the thermal-mechanical system are analyzed by introducing equivalent circuits for thermo-elastic transport mechanisms. Advanced failure analysis on degradation processes of interconnects can be performed by increasing temperature(More)
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