A.J. Valois

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We propose a new extended "end" resistance measurement technique to determine the series source and drain resistance of a field-effect transistor. In this method the small-signal "end" resistance, defined as a derivative of the drain-source voltage, with respect to the gate current, is measured as a function of the drain current. The "end" resistance(More)
Deep levels in modulation-doped field-effect transistors (MODFET's) fabricated from MBE-grown AlGaAs/GaAs heterostructures, have been characterized by a modified deep-level transient spectroscopy (DLTS) technique. Assuming donor-like traps in the AlGaAs layer, it is shown that the threshold voltage V<inf>t</inf>varies exponentially with time under(More)
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