A.J. Snell

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A novel copper damascene process is reported for fabrication of electrical critical dimension (ECD) reference material. The method of fabrication first creates an initial "silicon preform" whose linewidth is transferred into a trench using a silicon nitride mould. The trench is created by removing a portion of the silicon and replacing it with copper to(More)
Test structures have been fabricated to allow electrical critical dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in integrated circuit (IC) interconnect systems. The implementation of these structures is such that no conductive barrier metal has been used. The advantage of this approach is that the(More)
The novel overlay test structure reported in this paper was purposely designed to serve as an application-specific reference material. It features standard frame-in-frame optical overlay targets embedded in electrical test features and fabricated by the same process as the parts being manufactured. Optical overlay is commonly used in process control(More)
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