A.I. Abdul-Rahim

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This paper reports a method of controlling the gain of a bipolar transistor by incorporating Ge in the polysilicon emitter. Measured results show that varying the Ge content in the polySiGe from 0 to 33% gives a change in base current of approximately four. The competing influences of the Ge and the interfacial layer at the polySiGe/Si interface are(More)
Both wild-type virulent and mutant strains of pseudorabies virus (PrV) were used in this study. Mutants used were derived from the plaque purified strain PrVmAIP. A total of six drug resistant mutants, three bromodeoxyuridine (BUdR) resistant and three iododeoxyuridine (IUdR) resistant, respectively, were isolated and passaged in chicken embryo fibroblast(More)
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