A. Gushterov

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The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric(More)
Silicon oxynitride films have been deposited on Si substrates at 200 8C by a remote-plasma-assisted process in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as gas ambient. During deposition the Si substrates were biased with negative voltages of K120 and K600 V or were under no DC bias and the influence of this voltage on the(More)
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