Learn More
Defects or traps in semiconductors and nano devices that randomly capture and emit charge carriers result in low-frequency noise, such as burst and 1/<i>f</i> noise, that are great concerns in the design of both analog and digital circuits. The capture and emission rates of these traps are functions of the time-varying voltages across the device, resulting(More)
Modeling and analysis of low frequency noise in circuit simulators with time-varying bias conditions is a long-standing open problem. In this paper, we offer a definite solution for this problem and present a model for low-frequency noise that captures the internal, stochastic dynamics of the individual noise sources via dedicated internal pseudo nodes that(More)
Defects or traps in semiconductors and nano devices that randomly capture and emit charge carriers result in low-frequency noise, such as burst and 1/f noise, which are important concerns in the design of both analog and digital circuits. The capture and emission rates of these traps are functions of the time-varying voltages across the device, resulting in(More)
Modeling and analysis of low-frequency noise, such as 1/f and burst noise, with time-varying bias conditions is a long-standing open problem in circuit simulation. In this paper, we offer a solution for this problem and present a computational model for low-frequency noise. The merits of our model are twofold. First, it is fully nonstationary. It can(More)
  • 1