A. Gokcen Mahmutoglu

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Defects or traps in semiconductors and nano devices that randomly capture and emit charge carriers result in low-frequency noise, such as burst and 1/<i>f</i> noise, that are great concerns in the design of both analog and digital circuits. The capture and emission rates of these traps are functions of the time-varying voltages across the device, resulting(More)
Defects or traps in semiconductors and nano devices that randomly capture and emit charge carriers result in low-frequency noise, such as burst and 1/f noise, which are important concerns in the design of both analog and digital circuits. The capture and emission rates of these traps are functions of the time-varying voltages across the device, resulting in(More)
Modeling and analysis of low frequency noise in circuit simulators with time-varying bias conditions is a long-standing open problem. In this paper, we offer a definite solution for this problem and present a model for low-frequency noise that captures the internal, stochastic dynamics of the individual noise sources via dedicated internal pseudo nodes that(More)
Modeling and analysis of low-frequency noise, such as 1/f and burst noise, with time-varying bias conditions is a long-standing open problem in circuit simulation. In this paper, we offer a solution for this problem and present a computational model for low-frequency noise. The merits of our model are twofold. First, it is fully nonstationary. It can(More)
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