A. F. Satrapinski

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Metal-alloy (Ni–Cr–Cu–Al–Ge) thin-film resistors were coated with alumina (Al2O3) using the atomic layer deposition (ALD) technique. The electrical properties of the thin-film resistors were studied in the temperature range of 4.2–300 K. It was experimentally demonstrated that the protective dielectric alumina coating improves the long-term stability and(More)
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