A. Escobosa-Echavarria

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Here, a characterization methodology for integrated silicon-based photo-devices is presented. Devices are phototransistors (“P+/N-Well/P-substrate”) and photodiodes (“N-Well/P-substrate”) with similar sizes, (9µm×9µm). They were integrated in a 1.5µm CMOS technology through MOSIS. Through these(More)
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