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High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p+-n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and(More)
A combined conductive atomic force microscope (C-AFM)/scanning electron microscope (SEM) has been used to study the electric transport and retention mechanisms through Ge nanocrystals (NCs). The NCs were formed by a two-step dewetting/nucleation process on a silicon oxide layer grown on n-doped 001 silicon substrate. Without preliminary e-beam irradiation,(More)
The low frequency noise (LFN) method was used to characterize a two-dimensional electron gas (2DEG) in a double AlGaAs/GaAs/AlGaAs heterojunction from room temperature to cryogenic one. Measurements on noise presented by the power spectral density (PSD) of drain voltage are analyzed as a function for different applied voltages and temperatures in the(More)
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