A. D. Trigg

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Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the(More)
In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 /spl mu/m technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.
In this work, lanthanum-incorporated refractory metal nitride is investigated as an n-type metal gate electrode with tunable work function. By adding La into HfN metal gate deposited on SiO<sub>2</sub> gate dielectric, its gate work function can be tuned from 4.6 eV to 3.9 eV continuously by changing La composition. The authors also report the effective(More)
  • A.D. Trigg
  • Proceedings of the 11th International Symposium…
  • 2004
New developments in electronic packaging, higher density, new materials, the use of three dimensional chip stacks, packaging for photonics and the proliferation of so many different package types, pose serious challenges to the ability to locate and discover the root cause of failures within those packages. This paper highlights those challenges, identifies(More)
In this work, we investigate the effects of oxidation temperature and annealing on Ge movement, and amorphization as an undesirable consequence of inappropriate lowering of temperature during Ge condensation. Possible mechanisms, solutions and implications are presented and it is shown that SiGe with up to 60% Ge can be obtained with oxidation and annealing(More)
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