This paper analyses the effects of Single Event Upsets in an SRAM-based FPGA, with special emphasis for the transient faults affecting the configuration memory. Two approaches are combined: from one side, by exploiting the available information and tools dealing with the device configuration memory, we were able to make hypothesis on the meaning of every… (More)
Floating Gate (FG) semiconductor memories, such as EPROM, EEPROM and Flash, can be of interest for space applications thanks to their high performances in terms of data retention and information density. The most radiation sensitive part of commercial Flash memories is the complex circuitry external to the FG cell array. According to a model for the… (More)
—In this work, we present an original model to explain the accelerated wear-out behavior of irradiated ultra-thin oxides. The model uses a statistical approach to the breakdown occurrences based on a nonhomogeneous Poisson process. By means of our model, we can estimate the number and the time evolution of those damaged regions produced by ion hits that… (More)
Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total- ionizing dose and single event effects.