A. Candelori

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This paper analyses the effects of Single Event Upsets in an SRAM-based FPGA, with special emphasis for the transient faults affecting the configuration memory. Two approaches are combined: from one side, by exploiting the available information and tools dealing with the device configuration memory, we were able to make hypothesis on the meaning of every(More)
Floating Gate (FG) semiconductor memories, such as EPROM, EEPROM and Flash, can be of interest for space applications thanks to their high performances in terms of data retention and information density. The most radiation sensitive part of commercial Flash memories is the complex circuitry external to the FG cell array. According to a model for the(More)
—In this work, we present an original model to explain the accelerated wear-out behavior of irradiated ultra-thin oxides. The model uses a statistical approach to the breakdown occurrences based on a nonhomogeneous Poisson process. By means of our model, we can estimate the number and the time evolution of those damaged regions produced by ion hits that(More)
A 50 kV X-ray source and an 8 MeV electron beam were used to irradiate MOS transistors from a commercial 0.25 µm process to doses of 50 Mrad(SiO 2) and 80 Mrad(Si) respectively. Threshold voltage shifts of up to-140 mV were observed in PMOS transistors whilst noise measurements showed very little degradation in the white noise region after irradiation and(More)
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