A. C. Ulusoy

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This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20(More)
In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectromechanical systems embedded 0.25 μm SiGe-C BiCMOS technology. Measured results show that the presented IC achieves good performance in both frequency bands in terms of gain, noise figure and power consumption. These results(More)
In this work, a monolithically integrated segmented driver and Mach-Zehnder modulator (MZM) in 0.25 μm SiGe:C BiCMOS technology is presented. The driver and the modulator are divided in 16 segments and the MZM has a total length of 6.08 mm. The driver has a maximum gain of 14.5 dB. Electro-optical time-domain measurements were performed and an(More)
In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with f<sub>T</sub>/f<sub>max</sub> of 80/90 GHz. The high frequency of(More)
In this paper a linear optical modulator driver fabricated in a 0.13 &#x03BC;m BiCMOS SiGe:C technology is presented. The prototype is to be used in hybrid configuration with an InP segmented Mach-Zehnder modulator (SE-MZM), forming a transmitter sub-system with direct interface to the digital to analog converter (DAC), which is suitable for high order(More)
In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (f<sub>T</sub>/f<sub>max</sub>¿80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier(More)
A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state.(More)
This paper outlines the design and electrical characterization of an optical modulator driver fabricated in a 0.13 &#x03BC;m BiCMOS SiGe:C technology. The prototype, optimized for hybrid assembly with a 15-segment InP segmented Mach-Zehnder modulator (SE-MZM), displays integrated 4-bit digital-to-analog converter (DAC) functionality, allowing the generation(More)
In this paper, a 60 GHz system demonstrator for multi-Gb/s, short-range, line-of-sight communications is presented. The system utilizes a highly efficient receiver architecture with phase noise suppression capability, which performs carrier synchronization in the analog domain, eliminating the need for high speed, high precision analog-to-digital(More)