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  • Erica A. Douglas, Brianna A. Klein, Andrew Alan Allerman, A C Gustavo Baca, Torben R. Fortune, Andrew M. Armstrong
  • Physics
  • 76th Device Research Conference (DRC)
  • 2018 (First Publication: 1 June 2018)
  • High aluminum content AIGaN channel high electron mobility transistors (HEMTs) are an attractive candidate for the next generation of RF and high-power applications amongst ultra-wide bandgapContinue Reading