A. Balocchi

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We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe and time-resolved photoluminescence experiments. We obtained experimental evidence of the hyperfine interaction between hole and nuclear spins. In the absence of an external magnetic field, our calculations based on dipole-dipole coupling between the hole and the(More)
We show that the light-matter interaction in monolayer WSe_{2} is strongly enhanced when the incoming electromagnetic wave is in resonance with the energy of the exciton states of strongly Coulomb bound electron-hole pairs below the electronic band gap. We perform second harmonic generation (SHG) spectroscopy as a function of laser energy and polarization(More)
Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology. Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals, diluted magnetic semiconductors, quantum point(More)
In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly nonmonotonic, sign-changing field dependence of the bright neutral(More)
A process route for the fabrication of solvent-redispersible, surfactant-free Cu₂ZnSnS₄ (CZTS) nanoparticles has been designed with the objective to have the benefit of a simple sulfide source which advantageously acts as (i) a complexing agent inhibiting crystallite growth, (ii) a surface additive providing redispersion in low ionic strength polar solvents(More)
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the(More)
Quaternary chalcopyrite (Cu(2)CoSnS(4), Cu(2)ZnSnS(4)) nanocrystals displaying high crystallization and controlled morphology were synthesized via a high-temperature growth regime achieved by dissolution-reprecipitation of tailored ultrafine precursors in the temperature range 400-500 °C.
The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices(More)