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Journals and Conferences
The results of the development and experimental investigation of a L-, S- and C-band GaN transistor amplifiers with output pulse power from 68 to 200 Watt and minimum PAE 40-55% for AESA radar systems are presented. The experimental characteristics, design features and assembly technology of the amplifier are discussed.
Results of design and experimental investigations of two models (25W and 50W) 2-4 GHz GaN-based amplifiers are presented in this article.
This report describes the opportunities presented by the LTCC technology, its implementation and its practical application in the manufacture of 3D microwave devices.
Results of developing an automated measuring bench for measuring and identifying parameters of nonlinear microwave GaAs MESFET models in the form of crystals are presented. Measuring techniques, data processing, equipment setup and features are discussed.
The report presents the results of developing 5.5 GHz outdoor converters for WLAN base and subscriber stations with the data transmission rate of up to 55 Mbps.