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In this article we report the results of global structural optimization of the Si(1 1 4) surface, which is a stable high-index orientation of silicon. We use two independent procedures recently developed for the determination of surface reconstructions, the parallel-tempering Monte Carlo method and the genetic algorithm. These procedures, coupled with the(More)
A stable high-index surface of silicon, Si(5 5 12), is described. This surface forms a 2 x 1 reconstruction with one of the largest unit cells ever observed, 7.7 angstroms by 53.5 angstroms. Scanning tunneling microscopy (STM) reveals that the 68 surface atoms per 2 x 1 unit cell are reconstructed only on a local scale. A complete structural model for the(More)
Real-space images with atomic resolution of the BiO plane of Bi(2)Sr(2)CaCu(2)O(8+delta) were obtained with a scanning tunneling microscope. Single-crystal samples were cleaved and imaged under ultrahigh vacuum conditions at room temperature. The images clearly show the one-dimensional incommensurate superstructure along the b-axis that is common to this(More)
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