Preparation of nanolaminates by atomic layer deposition for non-volatile floating gate memory devices
A method for fabricating a nanolaminate for a non-volatile floating gate memory device using an ALD(atomic layer deposition) method is provided to enable performance of a process at a lower…
Interfacial Polymerization of Polysulfide-TCP Copolymers in Aqueous Surfactant Solution
- 조원태
- Materials Science
- 2014
Preparation of nickel oxide thin films by atomic layer deposition for non-volatile resistance random access memory devices
The present invention has been prepared, nickel oxide thin films by atomic layer deposition method to a method for forming a nickel oxide layer of the RRAM, a next-generation non-volatile memory…
Battery management apparatus and method for protecting a lithium iron phosphate cell from over-voltage using the same
Disclosed are a battery management apparatus and a method for protecting an overvoltage of an LFP cell using the same. According to an embodiment of the present invention, the battery management…
Apparatus for Estimating Depth Of Discharge of Secondary Battery and Method thereof
The present invention discloses a parameter estimation apparatus and method of the secondary battery. Device according to the invention, at least a first and a second anode material branding mixed…
Ultra-high strength steel sheet with excellent coating property and crashworthiness, and method for manufacturing the same
At the same time as the present invention controls the amount of the plating properties and to impact properties of the superior early strength steel sheet and a manufacturing method thereof,…
Hot-rolled steel plate having excellent welding property and burring property and method for manufacturing same
The purpose of an aspect of the present invention is to provide hot-rolled high-burring steel having excellent electric resistance welding property, thereby facilitating welding operations, and a…
Process for preparing nickel oxide thin film by atomic layer deposition using nickel(ii) aminoalkoxide
본 발명은 하기 화학식 1의 니켈 아미노알콕사이드 선구 물질을 니켈의 원료 화합물로 사용하여 원자층 침착법 (atomic layer deposition, ALD)으로 니켈 산화물 박막을 제조하는 방법에 관한 것으로, 본 발명의 방법에 따르면 기존의 원자층 침착법에 비해 더 온화한 공정 조건에서 품질이 좋은 니켈 산화물 박막을 얻을 수 있다. 상기 식에서,…
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