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An Al0.13GaInP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Vocand 11.9 mA/cm2 in Isc… (More)
A Ga In P/Al Ga As broadband tunnel junction(TJ) with a peak current density of 65.3 A/cm2 and an Al Ga In P/Al Ga As ultrabroad band TJ with a peak current density of 6.1 A/cm2 were studied and… (More)
The invention discloses a solar battery with a type-II heterojunction window layer, which adopts a semiconducting material capable of forming a type-II heterojunction with a material at an emitter… (More)
The invention discloses a UWB (Ultra Wide Band) gap tunnel junction used for connecting with a broad-band gap sub-battery in a multijunction solar battery. The UWB gap tunnel junction comprises an… (More)
The present invention discloses a solar cell containing a type II heterojunction window layer, the solar cell, using a semiconductor material capable of forming a type II heterojunction emitter… (More)