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Design and epitaxial growth of quantum-well for 852 nm laser diode
An InAlGaAs/AlGaAs strained quantum-well laser with high temperature stability was designed and grown to overcome the emission wavelength shift occurred in high temperature for a 852 nm laserExpand
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850 nm vertical cavity surface-emitting laser arrays
To improve the wire bonding and homogeneous injecting currents,this paper proposes a Vertical Cavity Surface-emitting Laser(VCSEL) array with a non-closed structure.In this structure,a non-closedExpand
  • 2
Temperature Characteristic Analysis of 808 nm Vertical Cavity Surface Emitting Laser Arrays
In order to study the output characteristics of 808 nm InGaAlAs vertical cavity surface emitting laser( VCSEL) array at different temperature,the InGaAlAs VCSEL temperature shift is calculated underExpand
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