Learn More
UNLABELLED Bulk GaAs1 - xBix/GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force microscopy (AFM). PL measurements exhibit that the bandgap of the alloy decreases with increasing bismuth composition. Moreover, PL peak energy and PL characteristic are(More)
UNLABELLED We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-resolved Shubnikov de Haas (SdH)(More)
  • 1